INSTITUTE OF PHYSICS, UNIVERSITY OF GREIFSWALDCHAIR OF EXPERIMENTAL PHYSICS: INTERFACE PHYSICSExperimentalphysik II - Grenzflächenphysik, Prof. Dr. Rainer Hippler |
2009
Journals
- Majumdar, A., Ganeva, M., Köpp, D., Datta, D., Mishra, P., Bhattacharayya, S., Ghose, D., Hippler, R.
Surface morphology and composition of films grown by size-selected Cu nanoclusters
Vacuum 83, 719 (2009) - Hippler, R., Kredl, J., Vartolomei, V.
Ion energy distribution of an inductively coupled radiofrequency discharge in argon and oxygen
Vacuum 83, 732 (2009) - Bhattacharyya, S.R., Datta, D., Shyjumon, I., Smirnov, B.M., Chini, T.K., Ghose, D., Hippler, R.
Growth and melting of silicon supported silver nanocluster films
J. Phys. D: Appl. Phys. 42 (2009) 035306 - Do, H.T., Sushkov, V., Hippler, R.
Tunable diode laser absorption spectroscopy of argon metastable atoms in Ar/C2H2 dusty plasmas
New. J. Phys. 11 (2009) 033020 - Bhattacharyya, S.R., Datta, D., Chini, T.K., Ghose, V., Shyjumon, I., Hippler, R.
Morphological evolution of films composed of energetic and size-selected silver nanocluster ions
Nucl. Instr. Meth. Phys. Res. B 267, 1432–1435 (2009) - Straňák, V., Cada, M., Quaas, M., Block, S., Bogdanowicz, R., Kment, S., Wulff, H., Hubička, Z., Helm, C.A.,
Tichý, M., Hippler, R.
Physical properties of homogeneous TiO2 films prepared by high power impulse magnetron sputtering as a function of crystallographic phase and nanostructure
J. Phys. D: Appl. Phys. 42 (2009) 105204 (12pp) - Datta, D., Bhattacharyya, S.R., Shyjumon, I., Ghose, D., Hippler, R.
Production and deposition of energetic metal nanocluster ions of silver on Si substrates
Surf. Coat. Technol. 203, 2452 (2009) - Majumdar, A., Bhattacharayya, S.R., Hippler, R.
Rapid thermal annealing effect on amorphous hydrocarbon film deposited by CH4/Ar dielectric barrier discharge plasma on Si wafer: Surface morphology and chemical evaluation
J. Appl. Phys. 105, 094909 (2009) - Majumdar, A., Ummanni, R., Schröder, K., Walther, R., Hippler, R.
Cancer cells (MCF-7, Colo-357, and LNCaP) viability on amorphous hydrogenated carbon nitride film deposited by dielectric barrier discharge plasma
J. Appl. Phys. 106, 034702 (2009) - Majumdar, A., Das, G., Basvani, K.R., Heinicke, J., Hippler, R.
Role of Nitrogen in the Formation of HC-N Films by CH4/N2 Barrier Discharge Plasma: Aliphatic Tendency
J. Phys. Chem. B 113, 15734–15741 (2009) - Majumdar, A., Singh, R.K., Palm, G.J., Hippler, R.
Dielectric barrier discharge plasma treatment on E. coli: Influence of CH4/N2, O2, N2/O2, N2, and Ar gases
J. Appl. Phys. 106, 084701 (2009) - Majumdar, A., Köpp, D., Ganeva, M., Datta, D., Bhattacharyya, S., Hippler, R.
Development of metal nanocluster ion source based on dc magnetron plasma sputtering at room temperature
Rev. Sci. Instrum. 80, 095103 (2009) - Majumdar, A., Scholz, G., Hippler, R.
Structural characterization of amorphous hydrogenated-carbon nitride (aH-CNx) film deposited by CH4/N2 dielectric barrier discharge plasma: 13C, 1H solid state NMR, FTIR and elemental analysis
Surf. Coat. Technol. 203, 2013-2016 (2009)